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1. product profile 1.1 general description 180 w ldmos power transistor for base st ation applications at frequencies from 2000 mhz to 2200 mhz. [1] test signal: 3gpp; test model 1; 64 dpch; par = 7.5 db at 0.01 % probability on ccdf per carrier; carrier spacing 5 mhz. 1.2 features and benefits ? typical 2-carrier w-cdma performance at frequencies of 2110 mhz and 2170 mhz, a supply voltage of 32 v and an i dq of 1600 ma: ? average output power = 50 w ? power gain = 17.5 db (typ) ? efficiency = 27.5 % ? acpr = ? 35 dbc ? easy power control ? integrated esd protection ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (2000 mhz to 2200 mhz) ? internally matched for ease of use ? qualified up to a supply voltage of 32 v BLF6G22-180PN; blf6g22ls-180pn power ldmos transistor rev. 04 ? 4 march 2010 product data sheet table 1. typical performance rf performance at t case = 25 c in a common source class-ab production test circuit. mode of operation f v ds p l(av) g p d acpr (mhz) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 2110 to 2170 32 50 17.5 27.5 ? 35 [1] caution this device is sensitive to electrostatic di scharge (esd). therefore care should be taken during transport and handling.
BLF6G22-180PN_22ls-180pn_3 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 04 ? 4 march 2010 2 of 14 nxp semiconductors blf6g22(ls)-180pn power ldmos transistor ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for w-cdma base statio ns and multicarrier applications in the 2000 mhz to 2200 mhz frequency range 2. pinning information [1] connected to flange. 3. ordering information table 2. pinning pin description simplified outline symbol BLF6G22-180PN (sot539a) 1drain1 2drain2 3gate1 4gate2 5source [1] blf6g22ls-180pn (sot539b) 1drain1 2drain2 3gate1 4gate2 5source [1] 5 12 4 3 4 3 5 1 2 sym117 5 12 4 3 4 3 5 1 2 sym117 table 3. ordering information type number package name description version BLF6G22-180PN - flanged balanced ldmost ceramic package; 2 mounting holes; 4 leads sot539a blf6g22ls-180pn - earless flanged balanced ldmost ceramic package; 4 leads sot539b
BLF6G22-180PN_22ls-180pn_3 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 04 ? 4 march 2010 3 of 14 nxp semiconductors blf6g22(ls)-180pn power ldmos transistor 4. limiting values 5. thermal characteristics 6. characteristics table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 c t case case temperature - 150 c t j junction temperature - 225 c table 5. thermal characteristics symbol parameter conditions type typ unit r th(j-case) thermal resistance from junction to case t case =80 c; p l(av) =50w BLF6G22-180PN 0.45 k/w blf6g22ls-180pn 0.38 k/w table 6. characteristics t j = 25 c per section; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =0.5ma65--v v gs(th) gate-source threshold voltage v ds =10 v; i d = 144 ma 1.575 1.9 2.3 v v gsq gate-source quiescent voltage v ds =32 v; i d = 800 ma 1.725 2.1 2.45 v i dss drain leakage current v gs =0v v ds =28v --3 a v ds =60v --5 a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -25-a i gss gate leakage current v gs =11 v; v ds = 0 v - - 300 na g fs forward transconductance v ds =10v; i d =7.2a - 10 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =5a -0.10.165
BLF6G22-180PN_22ls-180pn_3 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 04 ? 4 march 2010 4 of 14 nxp semiconductors blf6g22(ls)-180pn power ldmos transistor 7. application information 7.1 ruggedness in class-ab operation the BLF6G22-180PN and blf6g22ls-180pn are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 1600 ma; p l = 180 w (cw); f = 2170 mhz. table 7. application information mode of operation: 2-carrier w-cdma; par 7. 5 db at 0.01 % probability on ccdf; 3gpp test model 1; 1 to 64 pdpch; f 1 = 2112.5 mhz; f 2 = 2117.5 mhz; f 3 = 2162.5 mhz; f 4 = 2167.5 mhz; rf performance at v ds = 32 v; i dq = 1600 ma; t case = 25 c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) = 50 w 16.3 17.5 18.7 db rl in input return loss p l(av) = 50 w - ? 10 ? 6.5 db d drain efficiency p l(av) = 50 w 25 27.5 - % acpr adjacent channel power ratio p l(av) = 50 w - ? 35 ? 33 dbc table 8. application information mode of operation: 1-carrier w-cdma; par 7. 5 db at 0.01 % probability on ccdf; 3gpp test model 1; 1 to 64 pdpch; f 1 = 2162.5 mhz; f 2 = 2167.5 mhz; rf performance at v ds = 32 v; i dq = 1600 ma; t case = 25 c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit par o output peak-to-average ratio p l(av) =115w; at 0.01 % probability on ccdf 4.05 4.5 - db v ds =32v; i dq = 1600 ma; f = 2170 mhz. fig 1. one-tone cw power gain and drain effi ciency as functions of load power; typical values p l (w) 0 200 150 50 100 001aah632 16 18 20 g p (db) 14 20 40 60 d (%) 0 g p d
BLF6G22-180PN_22ls-180pn_3 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 04 ? 4 march 2010 5 of 14 nxp semiconductors blf6g22(ls)-180pn power ldmos transistor v ds =32v; i dq = 1600 ma; f 1 = 2170 mhz; f 2 = 2170.1 mhz. v ds =32v; i dq = 1600 ma; f 1 = 2170 mhz; f 2 = 2170.1 mhz. fig 2. two-tone cw power gain and drain efficiency as functions of peak envelope load power; typical values fig 3. two-tone intermodulation distortion as a function of peak envelope load power; typical values 001aah633 p l(pep) (w) 0 300 200 100 16 18 14 20 22 g p (db) 12 20 30 10 40 50 d (%) 0 g p d p l(pep) (w) 0 300 200 100 001aah634 ? 50 ? 30 ? 10 imd (dbc) ? 70 imd3 imd5 imd7 v ds =32v; i dq = 1600 ma; f 1 = 2162.5 mhz; f 2 = 2167.5 mhz; carrier spacing 5 mhz. v ds =32v; i dq = 1600 ma; f 1 = 2162.5 mhz; f 2 = 2167.5 mhz; carrier spacing 5 mhz. fig 4. 2-carrier w-cdma power gain and drain efficiency as functions of average load power; typical values fig 5. 2-carrier w-cdma adjacent channel power ratio as function of average load power; typical values p l(av) (w) 070 60 20 40 10 30 50 001aah635 18 16 20 21 g p (db) 14 19 17 15 20 10 30 35 d (%) 0 25 15 5 g p d p l(av) (w) 070 60 20 40 10 30 50 001aah636 ? 40 ? 50 ? 30 ? 20 acpr (dbc) ? 60
BLF6G22-180PN_22ls-180pn_3 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 04 ? 4 march 2010 6 of 14 nxp semiconductors blf6g22(ls)-180pn power ldmos transistor v ds =32v; i dq = 1600 ma; f 1 = 2157.5 mhz; f 2 = 2167.5 mhz; carrier spacing 10 mhz. v ds =32v; i dq = 1600 ma; f 1 = 2157.5 mhz; f 2 = 2167.5 mhz; carrier spacing 10 mhz. fig 6. 2-carrier w-cdma power gain and drain efficiency as functions of average load power; typical values fig 7. 2-carrier w-cdma adjacent channel power ratio and third order intermodulation distortion as functions of average load power; typical values p l(av) (w) 070 60 20 40 10 30 50 001aah637 18 16 20 21 g p (db) 14 19 17 15 20 10 30 35 d (%) 0 25 15 5 g p d p l(av) (w) 070 60 20 40 10 30 50 001aah638 ? 40 ? 50 ? 30 ? 20 acpr, imd3 (dbc) ? 60 imd3 acpr
BLF6G22-180PN_22ls-180pn_3 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 04 ? 4 march 2010 7 of 14 nxp semiconductors blf6g22(ls)-180pn power ldmos transistor 8. test information see table 9 for list of components. fig 8. test circuit for operation at 2110 mhz and 2170 mhz 001aah6 39 c15 c13 c12 c1 input 50 output 50 c11 c10 c9 c8 c7 c4 c3 c2 c16 c14 c6 r1 r2 r3 c5
BLF6G22-180PN_22ls-180pn_3 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 04 ? 4 march 2010 8 of 14 nxp semiconductors blf6g22(ls)-180pn power ldmos transistor [1] american technical ceramics type 100b or capacitor of same quality. [2] american technical ceramics type 180r or capacitor of same quality. striplines are on a double copper-clad rogers r04350 printed-circuit board (pcb) with r = 3.5 and thickness = 0.76 mm. see table 9 for list of components. fig 9. component layout for 2110 mhz and 2170 mhz test circuit 001aah64 0 input tb tb output BLF6G22-180PN BLF6G22-180PN c2 c1 c3 c4 r2 r1 r3 c5 c6 c14 c15 c16 c12 c13 c9 c8 c7 c10 c11 table 9. list of components for test circuit, see figure 8 and figure 9 . component description value remarks c1, c3, c5 atc multilayer ceramic chip capacitor 10 pf [1] c2, c8, c16 tdk multilayer ceramic chip capacitor 4.7 f c4, c6 tdk multilayer ceramic chip capacitor 220 nf c7, c14 atc multilayer ceramic chip capacitor 10 pf [2] c9 electrolytic capacitor 220 f; 63 v c10, c11, c15 murata ceramic chip capacitor 100 nf c12 atc multilayer cera mic chip capacitor 15 pf [2] c13 atc multilayer cerami c chip capacitor 0.3 pf [1] r1 chip resistor 33 r2, r3 chip resistor 5.6
BLF6G22-180PN_22ls-180pn_3 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 04 ? 4 march 2010 9 of 14 nxp semiconductors blf6g22(ls)-180pn power ldmos transistor 9. package outline fig 10. package outline sot539a references outline version european projection issue date iec jedec eiaj sot539a 10-02-02 00-03-03 0 5 10 mm scale p a f b e d u 2 l h q c 5 12 4 3 d 1 e a w 1 ab m m m q u 1 h 1 c b m m w 2 c e 1 m w 3 unit a mm d b 11.81 11.56 0.18 0.10 31.55 30.94 13.72 9.53 9.27 17.12 16.10 10.29 10.03 4.7 4.2 c e u 2 0.25 0.25 0.51 w 3 35.56 qw 2 w 1 f 1.75 1.50 u 1 41.28 41.02 h 1 25.53 25.27 p 3.30 3.05 q 2.26 2.01 ee 1 9.50 9.30 inches 0.465 0.455 0.007 0.004 1.242 1.218 d 1 31.52 30.96 1.241 1.219 0.540 0.375 0.365 0.674 0.634 0.405 0.395 0.185 0.165 0.010 0.010 0.020 1.400 0.069 0.059 1.625 1.615 1.005 0.995 0.130 0.120 0.089 0.079 0.374 0.366 h 3.48 2.97 0.137 0.117 l dimensions (millimetre dimensions are derived from the original inch dimensions) f langed balanced ldmost ceramic package; 2 mounting holes; 4 leads sot539 a note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on m3 screw.
BLF6G22-180PN_22ls-180pn_3 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 04 ? 4 march 2010 10 of 14 nxp semiconductors blf6g22(ls)-180pn power ldmos transistor fig 11. package outline sot539b references outline version european projection issue date iec jedec jeita sot539b sot539b_po 09-10-16 10-02-02 unit (1) mm max nom min 4.7 4.2 11.81 11.56 31.55 30.94 31.52 30.96 9.5 9.3 9.53 9.27 1.75 1.50 17.12 16.10 3.48 2.97 10.29 10.03 0.25 a dimensions e arless flanged balanced ldmost ceramic package; 4 leads sot539 b bc 0.18 0.10 dd 1 ee 1 e 13.72 fhh 1 25.53 25.27 lq 2.26 2.01 u 1 32.77 32.13 u 2 w 2 0.25 mm max nom min 0.185 0.165 0.465 0.455 1.242 1.218 1.241 1.219 0.374 0.366 0.375 0.365 0.069 0.059 0.674 0.634 0.137 0.117 0.405 0.395 0.01 0.007 0.004 0.54 1.005 0.995 0.089 0.079 1.275 1.265 0.01 w 3 0 5 10 mm scale c e q e 1 e h l b h 1 u 1 u 2 d w 2 w 3 1 2 3 4 d d a f d 1 5 note 1. millimeter dimensions are derived from the original inch dimensions.
BLF6G22-180PN_22ls-180pn_3 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 04 ? 4 march 2010 11 of 14 nxp semiconductors blf6g22(ls)-180pn power ldmos transistor 10. abbreviations 11. revision history table 10. abbreviations acronym description 3gpp 3rd generation partnership project ccdf complementary cumulative distribution function cw continuous wave dpch dedicated physical channel imd intermodulation distortion ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor par peak-to-average power ratio pdpch transmission power of the dedicated physical channel rf radio frequency vswr voltage standing-wave ratio w-cdma wideband code division multiple access table 11. revision history document id release date data sheet status change notice supersedes BLF6G22-180PN_22ls-180pn_4 20100304 product data sheet - BLF6G22-180PN_ 22ls-180pn_3 modifications: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. ? the status of this document has been changed to ?product data sheet?. BLF6G22-180PN_22ls-180pn_3 20091211 objective data sheet - BLF6G22-180PN_2 BLF6G22-180PN_2 20080423 product data sheet - BLF6G22-180PN_1 BLF6G22-180PN_1 20080221 preliminary data sheet - -
BLF6G22-180PN_22ls-180pn_3 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 04 ? 4 march 2010 12 of 14 nxp semiconductors blf6g22(ls)-180pn power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer?s third party customer(s) (hereinafter both referred to as ?application?). it is customer?s sole responsibility to check whether the nxp semiconductors product is suitable and fit for the application planned. customer has to do all necessary testing for the application in order to avoid a default of the application and the product. nxp semiconducto rs does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicond uctors product is au tomotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive sp ecifications and standards, customer (a) shall use the product without nx p semiconductors? warranty of the document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
BLF6G22-180PN_22ls-180pn_3 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 04 ? 4 march 2010 13 of 14 nxp semiconductors blf6g22(ls)-180pn power ldmos transistor product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive appl ications beyond nxp semiconductors? standard warranty and nxp semicond uctors? product specifications. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors blf6g22(ls)-180pn power ldmos transistor ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 4 march 2010 document identifier: BLF6G22-180PN_22ls-180pn_3 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 4 7.1 ruggedness in class-ab operation . . . . . . . . . 4 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 12 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 contact information. . . . . . . . . . . . . . . . . . . . . 13 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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